(China (Mainland))
Product Summary
The MRF6P18190H is an N-Channel Enhancement -Mode Lateral MOSFET designed for W-CDMA base station applications with frequencies from 1805 to 1880 MHz. The device is suitable for TDMA, CDMA and multicarrier amplifier applications.
Parametrics
MRF6P18190H absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -0.5, +68 Vdc; (2)Gate-Source Voltage, VGS: -0.5, +12 Vdc; (3)Storage Temperature Range, Tstg: - 65 to +150℃; (4)Case Operating Temperature, TC: 150℃; (5)Operating Junction Temperature, TJ: 225℃.
Features
MRF6P18190H features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications; (6)RoHS Compliant; (7)In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF6P18190H |
Other |
|
Data Sheet |
Negotiable |
|
||||
 |
MRF6P18190HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 1.8GHZ 44W |
Data Sheet |
Negotiable |
|
||||
|
MRF6P18190HR6 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 1.8GHZ 44W |
Data Sheet |
Negotiable |
|
||||